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Extra info for Bi-Polar Power Transistor Data Book [rev 8]
0ĂV 2 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut–Off Region Figure 13. com 54 ON Semiconductort 2N4921 thru 2N4923 * Medium-Power Plastic NPN Silicon Transistors . . designed for driver circuits, switching, and amplifier applications.
0 10 IC, COLLECTOR CURRENT (AMP) Figure 5. 2 Figure 6. 0 10 IC, COLLECTOR CURRENT (AMP) 20 30 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150°C 100 Figure 7. 0 Figure 9. Collector Saturation Region Figure 8. com 45 10 ON Semiconductort NPN 2N3773 * Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.
0 Figure 9. Collector Saturation Region Figure 8. com 45 10 ON Semiconductort NPN 2N3773 * Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. 17 _C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data.
Bi-Polar Power Transistor Data Book [rev 8]