Application of Lanchester Theory to Insurgency Problems by M. B Schaffer PDF

By M. B Schaffer

An program of Lanchester conception to the assessment of small-unit floor activities commonplace of insurgency in Vietnam.

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23 Prove that the capacitor element of Fig. 1-1(c) is a linear element by showing that it satisfies the converse of the superposition theorem. 24 Use the superposition theorem to find the current i in Fig. 1-14 if R1 ¼ 5 ; R2 ¼ 10 ; Vs ¼ 10 cos 2t V, and Is ¼ 3 cosð3t þ =4Þ A. 25 In Fig. 1-23, (a) find the The´venin equivalent voltage and impedance for the network to the left of terminals a; b, and (b) use the The´venin equivalent circuit to determine the current IL . Ans: ðaÞ VTh ¼ V1 À I2 R2 ; ZTh ¼ R1 þ R2 ; ðbÞ IL ¼ ðV1 À I2 R2 Þ=ðR1 þ R2 þ RL Þ R1 a _ + IL V1 I2 R2 RL b Fig.

The general form of the diode specification statement is as follows, where the model name is arbitrarily chosen: D Á Á Á n1 n2 model name Node n1 is the anode and node n2 is the cathode of the diode. Positive current and voltage directions are clarified by Fig. 2-1(b). MODEL control statement must be added to the netlist code even if the default parameters are acceptable. MODEL model name D (parameters) 34 SEMICONDUCTOR DIODES [CHAP. 2 If the parameters field is left blank, default values are assigned.

8. For the circuit of Fig. 2-10, determine iD . 7). The dynamic resistance of the diode at the Q point can be evaluated graphically: rd ¼ ÁvD 0:37 À 0:33 ¼ ¼ 2:5  ÁiD 0:044 À 0:028 Now the small-signal circuit of Fig. t mA CHAP. 2] 39 SEMICONDUCTOR DIODES iD _ LD + iD + Ideal _ VF LD VF (a) iD 1 _ LD + RF iD + RF Ideal Knee _ VF LD VF (b) iD 1 Ideal RR iD RF 1 _ LD + Ideal LD VF RR (c) Fig. 2-11 RTh id + + LTh rd Ld _ _ Fig. 2-12 RF _ + VF 40 SEMICONDUCTOR DIODES [CHAP. 9. For the circuit of Fig.

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Application of Lanchester Theory to Insurgency Problems by M. B Schaffer

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